K4T56163QI-ZCLCC SAMSUNG [Samsung semiconductor], K4T56163QI-ZCLCC Datasheet - Page 29

• Manufacturer Part Number: K4T56163QI-ZCLCC
• Description: 256Mb I-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T56163QI
V
V
Hold Slew Rate tangent line [ V
V
V
V
V
Rising Signal
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
DQS
DQS
max
max
min
min
V
SS
=
dc to V
dc to V
region
region
REF
REF
∆TR
tDS
tangent
REF(dc)
line
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Hold Slew Rate
Falling Signal
- Vil(dc)max ]
tDH
∆TR
=
nominal
tangent line [ Vih(dc)min - V
line
tDS
tangent
∆TF
line
tDH
∆TF
nominal
line
REF(dc)
Rev. 1.0 October 2007
DDR2 SDRAM
]