CY7C1512JV18-267BZI Cypress Semiconductor Corp, CY7C1512JV18-267BZI Datasheet - Page 25

• Manufacturer Part Number: CY7C1512JV18-267BZI
• Description: IC SRAM 72MBIT 267MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512JV18-267BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 267MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document History Page
Document #: 001-14435 Rev. *G
Document Title: CY7C1525JV18/CY7C1512JV18/CY7C1514JV18, 72-Mbit QDR
Document Number: 001-14435
Rev.
*G
*A
*B
*C
*D
*E
*F
**
ECN No.
1060980
1397384
1462588
2189567
2561954
2746930
2751694
2612311
VKN/AESA
VKN/AESA
VKN/PYRS
VKN/PYRS
VKN/AESA
Orig. Of
Change
VKN
VKN
NJY
Submission
07/31/2009
08/13/2009
See ECN
See ECN
See ECN
See ECN
09/04/08
11/25/08
Date
Description Of Change
New Data Sheet
Added 267MHz speed bin
Converted from preliminary to final
Removed 200MHz speed bin
Updated I
Changed DLL minimum operating frequency from 80MHz to 120MHz
Changed t
Minor Change-Moved to the external web
Changed Ambient Temperature with Power Applied from “–10°C to +85°C” to
“–55°C to +125°C” in the “Maximum Ratings“ on page 20,
Updated Power-up sequence waveform and it’s description,
Added footnote #19 related to I
Changed Θ
Changed JTAG ID [31:29] from 001 to 000.
Corrected logic block diagram of CY7C1525JV18
Post to external website
Removed x8 part number details
Included Soft Error Immunity Data
Modified Ordering Information table by including parts that are available and
modified the disclaimer for the Ordering information
Included the register mark instead of trademark for QDR
DD
CYC
JA
/I
SB
spec from 16.2 to 16.3, Changed Θ
max spec to 8.4ns for all speed bins
specs
®
DD
II SRAM 2-Word Burst Architecture
,
JC
CY7C1525JV18
CY7C1512JV18
CY7C1514JV18
spec from 2.3 to 2.1,
Page 25 of 26
[+] Feedback