PSMN9R0-25MLC,115 NXP Semiconductors, PSMN9R0-25MLC,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN9R0-25MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 55 A
• Resistance Drain-source Rds (on): 11.3 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 45 W
• Factory Pack Quantity: 1500

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT1210 (LFPAK33)
PSMN9R0-25MLC
Product data sheet
Plastic single ended surface mounted package (LFPAK33); 8 leads
Dimensions
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
H
mm
Unit
SOT1210
Outline
version
D
L
(1)
max
nom
min
0.90 0.10
0.80 0.00
A
1
A
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
e
1
e
1
0.35
0.25
b
IEC
E
0.35 0.20 0.30 2.70
0.25 0.10 0.20 2.50
b
1
b
c
b
1
4
c
JEDEC
0
1
All information provided in this document is subject to legal disclaimers.
w
A
D
1
(1)
A
References
A
C
2.35
1.90
D
Rev. 3 — 15 June 2012
1
mounting
3.40 2.45
3.20 2.00
E
base
(1)
JEITA
detail X
c
scale
1
2.5
E
1
0.65
e
A
Lp
0.65
X
e
1
c
3.40
3.20 0.13 0.30
H
y
C
5 mm
θ
0.25
L
D
PSMN9R0-25MLC
1
0.50
L
p
European
projection
0.20 0.10
w
y
E
8
0
1
θ
°
°
© NXP B.V. 2012. All rights reserved.
Issue date
11-12-19
12-03-12
sot1210_po
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