PSMN9R0-25MLC,115 NXP Semiconductors, PSMN9R0-25MLC,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN9R0-25MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 55 A
• Resistance Drain-source Rds (on): 11.3 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 45 W
• Factory Pack Quantity: 1500

NXP Semiconductors
Table 6.
PSMN9R0-25MLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
60
45
30
15
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
4.5
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
3.5
1
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
…continued
2
V
3
GS
Conditions
V
R
V
T
I
see
I
V
V
V
All information provided in this document is subject to legal disclaimers.
S
S
V
j
DS
GS
DS
GS
DS
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G(ext)
(V) =
= 25 °C
= 15 A; V
= 15 A; dI
DS
Figure 15
= 12.5 V; R
= 12.5 V
= 12.5 V; see
(V)
= 0 V; V
= 0 V; I
2.6
2.4
2.8
2.2
= 5 Ω
3
4
Rev. 3 — 15 June 2012
S
GS
S
DS
/dt = -100 A/µs; V
= 15 A; dI
= 0 V; T
= 12.5 V; f = 1 MHz;
L
= 0.8 Ω; V
Figure 16
Fig 7.
j
S
= 25 °C;
/dt = -100 A/µs;
R
(mΩ)
DSon
GS
30
25
20
15
10
5
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
= 4.5 V;
GS
0
= 0 V;
PSMN9R0-25MLC
4
Min
-
-
-
-
-
-
-
-
-
-
8
Typ
7.1
10.1
11.1
6.1
5.3
0.83
14.8
7.5
8.9
5.9
12
© NXP B.V. 2012. All rights reserved.
003aaj797
V
GS
Max
-
-
-
-
-
1.1
-
-
-
-
(V)
16
ns
ns
ns
Unit
ns
ns
nC
V
nC
ns
ns
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