PSMN9R0-25MLC,115 NXP Semiconductors, PSMN9R0-25MLC,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN9R0-25MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 55 A
• Resistance Drain-source Rds (on): 11.3 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 45 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN9R0-25MLC
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
60
45
30
15
0
mounting base temperature
Continuous drain current as a function of
Single pulse avalanche rating; avalanche current as a function of avalanche time
0
50
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
100
(A)
I
10
AL
10
150
2
1
10
All information provided in this document is subject to legal disclaimers.
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T
003aaj792
mb
(°C)
200
10
Rev. 3 — 15 June 2012
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
(2)
0
(1)
t
003aaj793
AL
(ms)
10
50
PSMN9R0-25MLC
100
150
© NXP B.V. 2012. All rights reserved.
T
mb
03na19
(°C)
200
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