PSMN9R0-25MLC,115 NXP Semiconductors, PSMN9R0-25MLC,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN9R0-25MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 55 A
• Resistance Drain-source Rds (on): 11.3 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 45 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN9R0-25MLC
Product data sheet
Fig 12. Gate charge waveform definitions
Fig 14. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
C
DS
C
003aaa508
003aaj805
C
iss
oss
rss
(V)
10
2
Rev. 3 — 15 June 2012
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain
V
(V)
GS
(A)
I
S
10
60
45
30
15
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
5 V
0.3
PSMN9R0-25MLC
T
j
5
= 150°C
V
DS
0.6
=
12.5 V
10
20 V
0.9
T
© NXP B.V. 2012. All rights reserved.
Q
j
G
= 25 °C
003aaj804
003aaj806
V
(nC)
SD
(V)
1.2
15
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