M25PE20-VMN6TP NUMONYX, M25PE20-VMN6TP Datasheet - Page 39

IC FLASH 2MBIT 75MHZ 8SOIC

M25PE20-VMN6TP

Manufacturer Part Number
M25PE20-VMN6TP
Description
IC FLASH 2MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE20-VMN6TP

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Cell Type
NOR
Density
2Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC N
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE20-VMN6TPTR

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M25PE20, M25PE10
6.12
Page Erase (PE)
The Page Erase (PE) instruction sets to ‘1’ (FFh) all bits inside the chosen page. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (D). Any address inside the
page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Page Erase cycle (whose duration is t
While the Page Erase cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page that is hardware protected is not executed.
Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 19. Page Erase (PE) instruction sequence
1. Address bits A23 to A18 are ‘Don’t care’ in the M25PE20. Address bits A23 to A17 are ‘Don’t care’ in the
M25PE10.
S
C
D
0
1
2
Instruction
3
4
Figure
5
6
19.
7
MSB
23 22
8
9
24-bit address
2
29 30 31
1
0
AI04046
PE
Instructions
) is initiated.
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