M25PX80-VMP6TG NUMONYX, M25PX80-VMP6TG Datasheet - Page 49

• Manufacturer Part Number: M25PX80-VMP6TG
• Description: IC FLASH 8MBIT 75MHZ 8VFQFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PX80-VMP6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PX80-VMP6TGTR

Table 17.
1. 75 MHz operations are allowd only on the VCC range 2.7 V - 3.6 V.
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
7. V
Symbol
t
t
t
t
t
t
SHQZ
HHQX
WHSL
SHWL
t
HLQZ
VPPHSL
t
t
t
t
t
t
t
t
t
t
RDP
t
CHSH
SHCH
CHHH
HHCH
SHSL
CLQV
CLQX
HLCH
CHHL
DP
t
PP
(success or failure) is known. Avoid applying V
t
t
SSE
CH
(7)
t
SE
BE
PPH
W
(8)
(4)
(4)
+ t
(4)
(4)
(4)
(6)
(6)
should be kept at a valid level until the program or erase operation has completed and its result
CL
must be greater than or equal to 1/ f
t
Alt.
t
CSH
t
t
t
DIS
HO
t
HZ
LZ
AC characteristics
V
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output Disable time
Clock Low to Output valid under 30 pF
Clock Low to Output valid under 10 pF
Output hold time
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect setup time
Write Protect hold time
Enhanced Program supply voltage High
(V
S High to Deep Power-down mode
S High to Standby mode
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Program OTP cycle time (64 bytes)
Subsector Erase cycle time
Sector Erase cycle time
Bulk Erase cycle time
PPH
Test conditions specified in
) to Chip Select Low
A
= 25° C.
Parameter
(1)
(continued)
C
.
PPH
to the W/VPP pin during Bulk Erase.
Table 13
Min
100
200
80
20
and
5
5
0
5
5
5
5
Table 14
int(n/8) ×
0.025
Typ
1.3
0.8
0.2
0.6
70
8
(2)
(9)
Max
150
30
15
80
8
8
6
8
8
3
5
3
Unit
49/60
ms
ms
ms
ms
μs
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s