MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 41

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4, the CAS latency = 2.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
t
CKS
AH
CH
AS
CL
1
DQMU, DQML
MIN
COMMAND
A0-A9, A11
2.5
9.6
1.5
BA0, BA1
1
3
3
8
1
CLK
CKE
A10
DQ
-8
MAX
t CMS
t CKS
100
100
t AS
t AS
t AS
7
8
ACTIVE
T0
ROW
ROW
BANK
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
MIN
2.5
9.6
2.5
12
Figure 37: READ – With Auto Precharge
1
3
3
1
t CK
T1
-10
NOP
MAX
100
100
ENABLE AUTO PRECHARGE
7
8
t CMS
t CL
COLUMN m 2
T2
BANK
READ
t CMH
UNITS
t CH
CAS Latency
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
T3
NOP
t LZ
t AC
41
T4
NOP
D
OUT
t OH
t AC
m
SYMBOL
t
t
t
t
HZ (3)
HZ (2)
t
t
CMH
CMS
t
RCD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS
t
t
D
t
OH
OUT
RC
RP
T5
LZ
NOP
m + 1
t OH
t AC
MIN
D
2.5
T6
OUT
48
80
19
19
NOP
1
1
3
m + 2
t OH
t AC
t RP
-8
120,000
MAX
D
T7
NOP
OUT
1
7
8
m + 3
t OH
t HZ
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
MIN
100
DON’T CARE
2.5
UNDEFINED
50
20
20
T8
BANK
1
1
3
ACTIVE
ROW
ROW
64Mb: x16
-10
120,000
MAX
7
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns