MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 47

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
SYMBOL
1. For this example, the burst length = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
CKS
t
AH
CH
AS
CL
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
1
CKE
CLK
A10
DQ
MIN MAX
2.5
9.6
2.5
1
3
3
8
1
t CKS
t CMS
t AS
t AS
t AS
-8
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
100
100
t AH
t AH
t AH
7
8
t RCD
t RAS
t RC
t CK
MIN
2.5
9.6
2.5
T1
12
Figure 43: WRITE – Without Auto Precharge
NOP
1
3
3
1
-10
IN
DISABLE AUTO PRECHARGE
MAX
m + 3> and the PRECHARGE command, regardless of frequency.
t CMS
100
100
t CL
t DS
COLUMN m 3
7
8
WRITE
BANK
T2
D
IN
t CMH
t CH
t DH
m
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
T4
IN
NOP
m + 2
t DH
47
SYMBOL
t DS
t
t
D
WR (m)
WR (a)
t
IN
t
t
T5
NOP
t
CMH
CMS
t
RCD
t
RAS
t
t
m + 3
DH
DS
RC
RP
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
NOP
T6
1 CLK
MIN
+7ns
2.5
2.5
2
48
80
19
19
15
1
1
SINGLE BANK
PRECHARGE
-8
ALL BANKS
BANK
120,000
T7
MAX
1
MOBILE SDRAM
t RP
©2003 Micron Technology, Inc. All rights reserved.
NOP
T8
1 CLK
MIN
+5ns
100
2.5
2.5
50
20
20
15
1
1
64Mb: x16
-10
ACTIVE
ROW
ROW
BANK
DON’T CARE
T9
120,000
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
–