CY7C135-25JXC Cypress Semiconductor Corp, CY7C135-25JXC Datasheet - Page 7

IC SRAM 32KBIT 25NS 52PLCC

CY7C135-25JXC

Manufacturer Part Number
CY7C135-25JXC
Description
IC SRAM 32KBIT 25NS 52PLCC
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C135-25JXC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
32K (4K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
52-PLCC
Density
32Kb
Access Time (max)
25ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
12b
Package Type
PLCC
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
180mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
52
Word Size
8b
Number Of Words
4K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C135-25JXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Document #: 38-06038 Rev. *D
Notes
16. The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write and either signal
17. R/W must be HIGH during all address transactions.
18. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
19. Data I/O pins enter high impedance when OE is held LOW during write.
can terminate a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.
to be placed on the bus for the required t
write pulse can be as short as the specified t
ADDRESS
ADDRESS
DATA
DATA
SEM
DATA
SEM
DATA
OR CE
OR CE
R/W
OUT
R/W
OUT
OE
[11]
IN
IN
[11]
Figure 7. Write Cycle No. 1: OE Three-States Data I/Os (Either Port)
Figure 8. Write Cycle No. 2: R/W Three-States Data I/Os (Either Port)
t
SA
(continued)
SD
. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the
PWE
t
SA
t
HZOE
.
t
SCE
t
t
AW
SCE
t
HIGH IMPEDANCE
t
AW
HZWE
t
WC
t
WC
t
PWE
t
PWE
PWE
t
SD
DATA VALID
t
HIGH IMPEDANCE
or (t
SD
DATA VALID
HZWE
+ t
SD
) to allow the I/O drivers to turn off and data
[16, 17, 18]
t
t
CY7C135, CY7C135A
t
HD
LZWE
HA
[17, 19]
t
LZOE
t
HA
t
HD
CY7C1342
Page 7 of 12
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