PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 10

DIODE DBL ESD PROTECTION SOT663

PESD3V3S2UQ,115

Manufacturer Part Number
PESD3V3S2UQ,115
Description
DIODE DBL ESD PROTECTION SOT663
Manufacturer
NXP Semiconductors
Datasheets

Specifications of PESD3V3S2UQ,115

Package / Case
SOT-663
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.6V
Power (watts)
150W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
15 A
Peak Pulse Power Dissipation
150 W
Capacitance
200 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.3 mm W x 1.7 mm L x 0.6 mm H
Operating Temperature Min Deg. C
-65C
Operating Temperature Max Deg. C
150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4519-2
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
NXP Semiconductors
8. Package outline
9. Packing information
PESDXS2UQ_SER_4
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Fig 10. Package outline PESDxS2UQ series (SOT663)
For further information and the availability of packing methods, see
Packing methods
Package Description
SOT663
SOT663
1.7
1.5
Dimensions in mm
Rev. 04 — 26 January 2010
1.3
1.1
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
Double ESD protection diodes in SOT663 package
0.5
1
1.7
1.5
1
3
PESDxS2UQ series
2
0.33
0.23
0.3
0.1
Section
0.6
0.5
[1]
0.18
0.08
02-05-21
12.
Packing quantity
4000
-
-115
© NXP B.V. 2010. All rights reserved.
8000
-315
-
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