PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 8

• Manufacturer Part Number: PESD3V3S2UQ,115
• Description: DIODE DBL ESD PROTECTION SOT663
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UQ,115

• Package / Case: SOT-663
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.6V
• Power (watts): 150W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 8 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 200 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Operating Temperature Min Deg. C: -65C
• Operating Temperature Max Deg. C: 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4519-2; 934057839115; PESD3V3S2UQ T/R; PESD3V3S2UQ T/R

NXP Semiconductors
PESDXS2UQ_SER_4
Product data sheet
Fig 8.
GND
GND
ESD clamping test setup and waveforms
Note 1: IEC61000-4-2 network
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
C
Z
ESD TESTER
= 150 pF; R
C
R
Z
Z
note 1
Z
= 330 Ω
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
DUT: PESDxS2UQ
Rev. 04 — 26 January 2010
450 Ω
50 Ω coax
RG 223/U
Double ESD protection diodes in SOT663 package
GND
GND
GND
GND
GND
GND
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
ATTENUATOR
PESDxS2UQ series
10×
PESD24VS2UQ
PESD15VS2UQ
PESD12VS2UQ
PESD5V2S2UQ
PESD3V3S2UQ
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
4 GHz DIGITAL
© NXP B.V. 2010. All rights reserved.
50 Ω
001aaa731
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