PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 7
![DIODE DBL ESD PROTECTION SOT663](/photos/5/24/52426/sot-663_sml.jpg)
PESD3V3S2UQ,115
Manufacturer Part Number
PESD3V3S2UQ,115
Description
DIODE DBL ESD PROTECTION SOT663
Manufacturer
NXP Semiconductors
Specifications of PESD3V3S2UQ,115
Package / Case
SOT-663
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.6V
Power (watts)
150W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
15 A
Peak Pulse Power Dissipation
150 W
Capacitance
200 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.3 mm W x 1.7 mm L x 0.6 mm H
Operating Temperature Min Deg. C
-65C
Operating Temperature Max Deg. C
150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4519-2
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
NXP Semiconductors
PESDXS2UQ_SER_4
Product data sheet
Fig 7.
(1) PESD3V3S2UQ; V
(2) PESD5V0S2UQ; V
I
PESD12VS2UQ; V
PESD15VS2UQ; V
PESD24VS2UQ; V
Relative variation of reverse leakage current as a function of junction temperature; typical values
R
is less than 15 nA at 150 °C for:
RWM
RWM
RWM
RWM
RWM
= 3.3 V
= 5 V
= 12 V
= 15 V
= 24 V
I
RM(25°C)
I
RM
10
10
−1
1
−100
−50
Rev. 04 — 26 January 2010
0
Double ESD protection diodes in SOT663 package
50
100
001aaa729
T
(1)
(2)
j
(°C)
PESDxS2UQ series
150
© NXP B.V. 2010. All rights reserved.
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