PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 11

DIODE DBL ESD PROTECTION SOT663

PESD3V3S2UQ,115

Manufacturer Part Number
PESD3V3S2UQ,115
Description
DIODE DBL ESD PROTECTION SOT663
Manufacturer
NXP Semiconductors
Datasheets

Specifications of PESD3V3S2UQ,115

Package / Case
SOT-663
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.6V
Power (watts)
150W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
15 A
Peak Pulse Power Dissipation
150 W
Capacitance
200 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.3 mm W x 1.7 mm L x 0.6 mm H
Operating Temperature Min Deg. C
-65C
Operating Temperature Max Deg. C
150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4519-2
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
NXP Semiconductors
PACKAGE OUTLINE
Double ESD protection diodes
in SOT663 package
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT663
0.6
0.5
A
0.33
0.23
b
p
0.18
0.08
c
IEC
1
e 1
Y
1.7
1.5
D
D
e
b p
1.3
1.1
E
3
JEDEC
0
1.0
e
REFERENCES
2
Rev. 03 - 11 September 2008
0.5
e
1
w
B
M
1.7
1.5
H
B
E
JEITA
scale
1
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
PESDxS2UQ series
EUROPEAN
L p
Product specification
c
X
ISSUE DATE
01-12-04
02-05-21
11 of 13
SOT663

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