PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 13
![DIODE DBL ESD PROTECTION SOT663](/photos/5/24/52426/sot-663_sml.jpg)
PESD3V3S2UQ,115
Manufacturer Part Number
PESD3V3S2UQ,115
Description
DIODE DBL ESD PROTECTION SOT663
Manufacturer
NXP Semiconductors
Specifications of PESD3V3S2UQ,115
Package / Case
SOT-663
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.6V
Power (watts)
150W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
15 A
Peak Pulse Power Dissipation
150 W
Capacitance
200 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.3 mm W x 1.7 mm L x 0.6 mm H
Operating Temperature Min Deg. C
-65C
Operating Temperature Max Deg. C
150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4519-2
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
NXP Semiconductors
Revision history
Table 1.
Document ID
PESDXS2UQ_SER_N_3
Modifications:
PESDXS2UQ_SERIES_2 20040427
PESDXS2UQ_SERIES_1 20031215
Revision history
Release date
20080911
•
Asterisks and note 1 removed in Marking Table
Data sheet status
Product data sheet
Product specification
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Double ESD protection diodes in SOT663 package
Change notice
-
-
-
PESDxS2UQ series
Document identifier: PESDXS2UQ_SER_N_3
Supersedes
PESDXS2UQ_SERIES_2
PESDXS2UQ_SERIES_1
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Date of release: 11 September 2008
All rights reserved.