PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 3

• Manufacturer Part Number: PESD3V3S2UQ,115
• Description: DIODE DBL ESD PROTECTION SOT663
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UQ,115

• Package / Case: SOT-663
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.6V
• Power (watts): 150W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 8 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 200 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Operating Temperature Min Deg. C: -65C
• Operating Temperature Max Deg. C: 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4519-2; 934057839115; PESD3V3S2UQ T/R; PESD3V3S2UQ T/R

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20 s exponential decaying waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
P
I
T
T
T
pp
j
amb
stg
pp
Double ESD protection diodes
in SOT663 package
SYMBOL
TYPE NUMBER
peak pulse power
peak pulse current
junction temperature
operating ambient temperature
storage temperature
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PARAMETER
NAME
plastic surface mounted package; 3 leads
Rev. 03 - 11 September 2008
8/20 s pulse; notes 1 and 2
8/20 s pulse; notes 1 and 2
DESCRIPTION
CONDITIONS
PACKAGE
PESDxS2UQ series
65
65
MIN.
Product specification
150
15
15
5
5
3
150
+150
+150
MAX.
VERSION
SOT663
3 of 13
W
A
A
A
A
A
C
C
C
UNIT