PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 7

• Manufacturer Part Number: PESD3V3S2UQ,115
• Description: DIODE DBL ESD PROTECTION SOT663
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UQ,115

• Package / Case: SOT-663
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.6V
• Power (watts): 150W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 8 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 200 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Operating Temperature Min Deg. C: -65C
• Operating Temperature Max Deg. C: 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4519-2; 934057839115; PESD3V3S2UQ T/R; PESD3V3S2UQ T/R

NXP Semiconductors
Double ESD protection diodes
in SOT663 package
Fig.6
(1) PESD3V3S2UQ; V
(2) PESD5V0S2UQ; V
T
(pF)
C
amb
240
200
160
120
d
80
40
= 25 C; f = 1 MHz.
0
Diode capacitance as a function of reverse
voltage; typical values.
1
(2)
(1)
RWM
RWM
2
= 3.3 V.
= 5 V.
3
4
001aaa727
V
R
(V)
Rev. 03 - 11 September 2008
5
(1) PESD12VS2UQ; V
(2) PESD15VS2UQ; V
(3) PESD24VS2UQ; V
Fig.7
T
(pF)
amb
C
d
50
40
30
20
10
= 25 C; f = 1 MHz.
0
0
Diode capacitance as a function of reverse
voltage; typical values.
5
RWM
RWM
RWM
(1)
10
= 12 V.
= 15 V.
= 24 V.
PESDxS2UQ series
(2)
15
Product specification
(3)
20
001aaa728
V
R
(V)
7 of 13
25