MMBZ33VAL,215 NXP Semiconductors, MMBZ33VAL,215 Datasheet
MMBZ33VAL,215
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MMBZ33VAL,215 Summary of contents
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MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression Rev. 01 — 1 September 2008 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small ...
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... NXP Semiconductors 1.4 Quick reference data Table unless otherwise specified. amb Symbol Per diode V RWM Pinning information Table 3. Pin MMBZXVAL_SER_1 Product data sheet Double ESD protection diodes for transient overvoltage suppression Quick reference data Parameter Conditions reverse standoff voltage MMBZ12VAL ...
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... NXP Semiconductors 3. Ordering information Table 4. Type number MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL MMBZ12VAL/DG MMBZ15VAL/DG MMBZ18VAL/DG MMBZ20VAL/DG MMBZ27VAL/DG MMBZ33VAL/DG 4. Marking Table 5. Type number MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China MMBZXVAL_SER_1 Product data sheet ...
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... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode P PPM I PPM Per device P tot amb T stg [1] In accordance with IEC 61643-321 (10/1000 s current waveform). [2] Measured from pin pin 3. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...
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... NXP Semiconductors Table 8. Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 150 I PP (%) 100 % 100 1000 1.0 2.0 Fig 1. 10/1000 s pulse waveform according to IEC 61643-321 6. Thermal characteristics Table 9. Symbol Per device R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...
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... NXP Semiconductors 7. Characteristics Table 10 unless otherwise specified. amb Symbol Parameter Per diode RWM MMBZXVAL_SER_1 Product data sheet Double ESD protection diodes for transient overvoltage suppression Characteristics Conditions forward voltage reverse standoff voltage MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG ...
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... NXP Semiconductors Table 10 unless otherwise specified. amb Symbol Parameter [1] In accordance with IEC 61643-321(10/1000 s current waveform). [2] Measured from pin pin 3. MMBZXVAL_SER_1 Product data sheet Double ESD protection diodes for transient overvoltage suppression Characteristics …continued Conditions diode capacitance MHz; V MMBZ12VAL MMBZ12VAL/DG ...
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... NXP Semiconductors PPM ( MMBZ27VAL: unidirectional and bidirectional amb Fig 3. Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values 100 C d (pF MHz amb (1) MMBZ15VAL: unidirectional (2) MMBZ15VAL: bidirectional (3) MMBZ27VAL: unidirectional (4) MMBZ27VAL: bidirectional Fig 5. Diode capacitance as a function of reverse voltage; typical values ...
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... NXP Semiconductors RWM + P-N Fig 7. V-I characteristics for a unidirectional ESD protection diode 8. Application information The MMBZxVAL series is designed for the protection two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. ...
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... NXP Semiconductors Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the devices as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. ...
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... NXP Semiconductors 11. Packing information Table 11. The indicated -xxx are the last three digits of the 12NC ordering code. Type number MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL MMBZ12VAL/DG MMBZ15VAL/DG MMBZ18VAL/DG MMBZ20VAL/DG MMBZ27VAL/DG MMBZ33VAL/DG [1] For further information and the availability of packing methods, see MMBZXVAL_SER_1 ...
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... NXP Semiconductors 12. Soldering 3 1.7 Fig 11. Reflow soldering footprint SOT23 (TO-236AB) 4.6 2.6 Fig 12. Wave soldering footprint SOT23 (TO-236AB) MMBZXVAL_SER_1 Product data sheet Double ESD protection diodes for transient overvoltage suppression 3.3 2.9 1 2 1.4 2.8 4.5 Rev. 01 — 1 September 2008 ...
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... NXP Semiconductors 13. Revision history Table 12. Revision history Document ID Release date MMBZXVAL_SER_1 20080901 MMBZXVAL_SER_1 Product data sheet Double ESD protection diodes for transient overvoltage suppression Data sheet status Product data sheet Rev. 01 — 1 September 2008 MMBZxVAL series Change notice Supersedes - - © NXP B.V. 2008. All rights reserved. ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 16. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Application information Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 11 Packing information ...