MMBZ33VAL,215 NXP Semiconductors, MMBZ33VAL,215 Datasheet - Page 5

• Manufacturer Part Number: MMBZ33VAL,215
• Description: DIODE ESD PROT DBL 26V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ33VAL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 26V
• Voltage - Breakdown: 31.35V
• Power (watts): 40W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Channels: 2 Channels
• Breakdown Voltage: 31.35 V
• Capacitance: 55 pF
• Termination Style: Gull Wing Leads
• Operating Temperature Range: - 55 C to + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061802215

NXP Semiconductors
6. Thermal characteristics
MMBZXVAL_SER_1
Product data sheet
Fig 1.
(%)
I
PP
150
100
50
0
0
10/1000 s pulse waveform according to
IEC 61643-321
100 % I
1.0
PP
Table 8.
Table 9.
[1]
[2]
[3]
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Symbol
Per device
R
R
; 10 s
50 % I
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Measured from pin 1 or 2 to pin 3.
2.0
PP
; 1000 s
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
ESD standards compliance
Thermal characteristics
3.0
Double ESD protection diodes for transient overvoltage suppression
t
006aab319
p
(ms)
Rev. 01 — 1 September 2008
4.0
Fig 2.
100 %
10 %
Conditions
in free air
90 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
MMBZxVAL series
t
r
30 ns
0.7 ns to 1 ns
60 ns
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
© NXP B.V. 2008. All rights reserved.
001aaa631
Max
460
340
50
t
2
.
Unit
K/W
K/W
K/W
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