MMBZ33VAL,215 NXP Semiconductors, MMBZ33VAL,215 Datasheet - Page 2

• Manufacturer Part Number: MMBZ33VAL,215
• Description: DIODE ESD PROT DBL 26V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ33VAL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 26V
• Voltage - Breakdown: 31.35V
• Power (watts): 40W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Channels: 2 Channels
• Breakdown Voltage: 31.35 V
• Capacitance: 55 pF
• Termination Style: Gull Wing Leads
• Operating Temperature Range: - 55 C to + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061802215

NXP Semiconductors
2. Pinning information
MMBZXVAL_SER_1
Product data sheet
1.4 Quick reference data
Table 2.
T
Table 3.
Symbol
Per diode
V
C
Pin
1
2
3
amb
RWM
d
= 25 C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Description
cathode (diode 1)
cathode (diode 2)
common anode
Quick reference data
Pinning
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 1 September 2008
Conditions
f = 1 MHz; V
Simplified outline
R
1
= 0 V
MMBZxVAL series
3
Min
-
-
-
-
-
-
-
-
-
-
-
-
2
Typ
-
-
-
-
-
-
110
85
70
65
48
45
Graphic symbol
© NXP B.V. 2008. All rights reserved.
1
Max
8.5
12
14.5
17
22
26
140
105
90
80
60
55
3
006aaa154
2
Unit
V
V
V
V
V
V
pF
pF
pF
pF
pF
pF
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