MMBZ33VAL,215 NXP Semiconductors, MMBZ33VAL,215 Datasheet - Page 9

• Manufacturer Part Number: MMBZ33VAL,215
• Description: DIODE ESD PROT DBL 26V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ33VAL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 26V
• Voltage - Breakdown: 31.35V
• Power (watts): 40W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Channels: 2 Channels
• Breakdown Voltage: 31.35 V
• Capacitance: 55 pF
• Termination Style: Gull Wing Leads
• Operating Temperature Range: - 55 C to + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061802215

NXP Semiconductors
8. Application information
MMBZXVAL_SER_1
Product data sheet
Fig 7.
V
CL
V-I characteristics for a unidirectional
ESD protection diode
V
BR
V
RWM
P-N
The MMBZxVAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The devices provide a surge capability of 40 W per line for a 10/1000 s waveform.
+
Fig 9.
I
Typical application: ESD and transient voltage protection of data lines
I
I
I
I
RM
R
PPM
PP
Double ESD protection diodes for transient overvoltage suppression
unidirectional protection
006aab324
Rev. 01 — 1 September 2008
of two lines
V
line 1 to be protected
line 2 to be protected
MMBZxVAL
GND
Fig 8.
V
CL
V
V-I characteristics for a bidirectional
ESD protection diode
BR
V
RWM
bidirectional protection
MMBZxVAL series
of one line
MMBZxVAL
line 1 to be protected
GND
I
I
PPM
PP
I
RM
I
R
I
I
I
I
RM
R
PP
PPM
006aab326
© NXP B.V. 2008. All rights reserved.
V
RWM
+
006aab325
V
BR
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V
CL