PIC18F13K50-I/SO Microchip Technology, PIC18F13K50-I/SO Datasheet - Page 18

IC PIC MCU FLASH 8K 1.8V 20-SOIC

PIC18F13K50-I/SO

Manufacturer Part Number
PIC18F13K50-I/SO
Description
IC PIC MCU FLASH 8K 1.8V 20-SOIC
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18F13K50-I/SO

Core Size
8-Bit
Program Memory Size
8KB (4K x 16)
Core Processor
PIC
Speed
48MHz
Connectivity
I²C, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
14
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Controller Family/series
PIC18
No. Of I/o's
15
Eeprom Memory Size
256Byte
Ram Memory Size
512Byte
Cpu Speed
48MHz
No. Of Timers
4
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
EUSART, I2C, MSSP, SPI, USB
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
15
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, DM164127, DV164126
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 11 Channel
Package
20SOIC W
Device Core
PIC
Family Name
PIC18
Maximum Speed
48 MHz
Operating Supply Voltage
3.3|5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DV164126 - KIT DEVELOPMENT USB W/PICKIT 2DM164127 - KIT DEVELOPMENT USB 18F14/13K50AC164112 - VOLTAGE LIMITER MPLAB ICD2 VPPXLT20SO1-1 - SOCKET TRANS ICE 20DIP TO 20SOICAC164307 - MODULE SKT FOR PM3 28SSOP
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F13K50-I/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
PIC18F1XK50/PIC18LF1XK50
4.2.1
The previous programming example assumed that the
device has been Bulk Erased prior to programming
(see Section 4.1.1 “High-Voltage ICSP Bulk Erase”).
It may be the case, however, that the user wishes to
modify only a section of an already programmed
device.
TABLE 4-6:
DS41342E-page 18
Step 1: Direct access to program Flash.
Step 2: Read program Flash into buffer (Section 5.1 “Read Program Flash, ID Locations and Configuration Bits”).
Step 3: Set the Table Pointer for the block to be erased.
Step 4: Enable memory writes and setup an erase.
Step 5: Initiate erase.
Step 6: Poll WR bit. Repeat until bit is clear.
Step 7: Load write buffer. The correct bytes will be selected based on the Table Pointer.
To continue modifying data, repeat Steps 2 through 6, where the Address Pointer is incremented by the appropriate number of bytes
(see Table 4-4) at each iteration of the loop. The write cycle must be repeated enough times to completely rewrite the contents of the
erase buffer.
Step 8: Disable writes.
Command
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
1101
1111
0000
0000
4-bit
MODIFYING PROGRAM FLASH
MODIFYING PROGRAM FLASH
0E <Addr[21:16]>
0E <Addr[21:16]>
0E <Addr[8:15]>
0E <Addr[8:15]>
0E <Addr[7:0]>
0E <Addr[7:0]>
<MSB><LSB>
<MSB><LSB>
<MSB><LSB>
Data Payload
8E A6
9C A6
6E F8
6E F7
6E F6
6E F5
6E F8
6E F7
6E F6
84 A6
88 A6
88 A6
82 A6
00 00
00 00
50 A6
00 00
00 00
94 A6
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BSF
BSF
NOP
NOP
MOVF
MOVWF
NOP
Shift out data
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
Write 2 bytes and post-increment address by 2.
Repeat as many times as necessary to fill the write buffer
Write 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
BCF
Advance Information
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
<Addr[21:16]>
TBLPTRU
<Addr[8:15]>
TBLPTRH
<Addr[7:0]>
TBLPTRL
EECON1, WREN
EECON1, FREE
<Addr[21:16]>
TBLPTRU
<Addr[8:15]>
TBLPTRH
<Addr[7:0]>
TBLPTRL
EECON1, FREE
EECON1, WR
Erase starts on the 4th clock of this instruction
EECON1, W, 0
TABLAT
(1)
The appropriate number of bytes required for the erase
buffer must be read out of program Flash (as described
in Section 5.2 “Verify Program Flash and ID Loca-
tions”) and buffered. Modifications can be made on
this buffer. Then, the block of program Flash that was
read out must be erased and rewritten with the
modified data.
The WREN bit must be set if the WR bit in EECON1 is
used to initiate a write sequence.
Core Instruction
 2010 Microchip Technology Inc.

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