PIC18LF13K50-I/P Microchip Technology, PIC18LF13K50-I/P Datasheet - Page 62
![IC PIC MCU FLASH 4KX16 20-PDIP](/photos/12/13/121303/150-20-dip_sml.jpg)
PIC18LF13K50-I/P
Manufacturer Part Number
PIC18LF13K50-I/P
Description
IC PIC MCU FLASH 4KX16 20-PDIP
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.PIC18F13K50-ISS.pdf
(420 pages)
2.PIC18F13K50-ISS.pdf
(40 pages)
3.PIC18F13K50-ISS.pdf
(10 pages)
4.PIC18F13K50-ISS.pdf
(2 pages)
5.PIC18F13K50-ISO.pdf
(414 pages)
Specifications of PIC18LF13K50-I/P
Core Size
8-Bit
Program Memory Size
8KB (4K x 16)
Core Processor
PIC
Speed
48MHz
Connectivity
I²C, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
14
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-DIP (0.300", 7.62mm)
Controller Family/series
PIC18
No. Of I/o's
15
Eeprom Memory Size
256Byte
Ram Memory Size
512Byte
Cpu Speed
48MHz
No. Of Timers
4
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART, I2C, MSSP, SPI, USB
Maximum Clock Frequency
32 KHz
Number Of Programmable I/os
18
Number Of Timers
4
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, DM164127, DV164126
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
- PIC18F13K50-ISS PDF datasheet
- PIC18F13K50-ISS PDF datasheet #2
- PIC18F13K50-ISS PDF datasheet #3
- PIC18F13K50-ISS PDF datasheet #4
- PIC18F13K50-ISO PDF datasheet #5
- Current page: 62 of 414
- Download datasheet (4Mb)
PIC18F1XK50/PIC18LF1XK50
5.6
Data EEPROM memory has its own code-protect bits in
Configuration
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect Configuration bit. Refer to Section 24.0
“Special Features of the CPU” for additional
information.
5.7
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during
parameter 33).
EXAMPLE 5-3:
TABLE 5-1:
DS41350C-page 60
INTCON
EEADR
EEADRH
EEDATA
EECON2
EECON1
IPR2
PIR2
PIE2
Legend: — = unimplemented, read as ‘0’. Shaded cells are not used during Flash/EEPROM access.
Loop
Name
Operation During Code-Protect
Protection Against Spurious Write
the
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ
BRA
BCF
BSF
EEPROM Data Register
EEPROM Control Register 2 (not a physical register)
GIE/GIEH
EEADR7
Power-up
OSCFIP
OSCFIF
OSCFIE
Words.
EEPGD
Bit 7
—
REGISTERS ASSOCIATED WITH DATA EEPROM MEMORY
EEADR
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
0AAh
EECON2
EECON1, WR
EECON1, WR
$-2
EEADR, F
LOOP
EECON1, WREN
INTCON, GIE
DATA EEPROM REFRESH ROUTINE
External
PEIE/GIEL
Timer
EEADR6
CFGS
Bit 6
C1IP
C1IF
C1IE
—
read
period
EEADR5 EEADR4 EEADR3 EEADR2 EEADR1 EEADR0
TMR0IE
Bit 5
C2IP
C2IF
C2IE
and
—
—
(T
; Start at address 0
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
; Disable writes
; Enable interrupts
PWRT
write
Preliminary
INT0IE
FREE
,
EEIP
EEIF
EEIE
Bit 4
—
WRERR
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
5.8
The data EEPROM is a high-endurance, byte
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated often).
When variables in one section change frequently, while
variables in another section do not change, it is possible
to exceed the total number of write cycles to the
EEPROM without exceeding the total number of write
cycles to a single byte. If this is the case, then an array
refresh must be performed. For this reason, variables
that change infrequently (such as constants, IDs,
calibration, etc.) should be stored in Flash program
memory.
RABIE
BCLIP
BCLIF
BCLIE
Bit 3
—
Using the Data EEPROM
TMR0IF
WREN
USBIP
USBIE
USBIF
Bit 2
—
EEADR9 EEADR8
TMR3IP
TMR3IF
TMR3IE
INT0IF
© 2009 Microchip Technology Inc.
Bit 1
WR
RABIF
Bit 0
RD
—
—
—
on page
Values
Reset
279
281
281
281
281
281
282
282
282
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