ST10F269Z2Q3 STMicroelectronics, ST10F269Z2Q3 Datasheet - Page 161

IC FLASH MEM 256KBIT 144-PQFP

ST10F269Z2Q3

Manufacturer Part Number
ST10F269Z2Q3
Description
IC FLASH MEM 256KBIT 144-PQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of ST10F269Z2Q3

Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
CAN, EBI/EMI, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-QFP
Processor Series
ST10F26x
Core
ST10
Data Bus Width
16 bit
Data Ram Size
12 KB
Interface Type
CAN, SSC, USART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
111
Number Of Timers
2 x 16 bit
Operating Supply Voltage
0.3 V to 4 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
16 bit x 10 bit
Cpu Family
ST10
Device Core Size
16b
Frequency (max)
40MHz
Total Internal Ram Size
12KB
# I/os (max)
111
Number Of Timers - General Purpose
5
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Instruction Set Architecture
CISC/RISC
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
144
Package Type
PQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2042

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ST10F269
Table 48 : Demultiplexed Bus Characteristics (PQFP144 devices)
Notes: 1. RW-delay and
V
ALE cycle time = 4 TCL + 2t
refer to the next following bus cycle.
Table 49 : Demultiplexed Bus Characteristics (TQFP144 devices)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
41
82
83
46
47
48
49
50
51
53
68
55
57
5
6
80
DD
Symbol
= 5V
CC
CC
CC
SR
SR
CC
CC
CC
SR
SR
SR
CC
CC
2. Read data are latched with the same clock edge that triggers the address change and the rising RD edge. Therefore address
changes before the end of RD have no impact on read cycles.
3. Partially tested, guaranteed by design characterization.
CC
CC
CC
Latched CS hold after RD, WR
Address setup to RdCS, WrCS
(with RW-delay)
Address setup to RdCS, WrCS
(no RW-delay)
RdCS to Valid Data In
(with RW-delay)
RdCS to Valid Data In
(no RW-delay)
RdCS, WrCS Low Time
(with RW-delay)
RdCS, WrCS Low Time
(no RW-delay)
Data valid to WrCS
Data hold after RdCS
Data float after RdCS
(with RW-delay)
Data float after RdCS
(no RW-delay)
Address hold after
RdCS, WrCS
Data hold after WrCS
10%, V
ALE high time
Address setup to ALE
Address/Unlatched CS setup
to RD, WR
(with RW-delay)
t
A
SS
Parameter
refer to the next following bus cycle.
Parameter
= 0V, T
A
A
+ t
= -40 to +85°C, C
C
+ t
F
3
3
(125ns at 32MHz CPU clock without wait states) RW-delay and t
14.5 + 2t
Minimum
21.25 + 2t
15.5 + t
-8.5 + t
5.625 + t
0.625 + t
Maximum CPU Clock
Minimum
2 + 2t
28 + t
10 + t
Maximum CPU Clock =
2 + t
2 + t
0
F
F
A
C
C
= 40MHz
F
C
L
A
A
A
= 50pF,
32MHz
A
Maximum
16.5 + t
16.5 + t
4 + t
Maximum
4 + t
C
F
C
F
TCL - 10.5 + 2t
3 TCL - 9.5 + t
2 TCL - 15 + t
TCL - 10.5 + t
TCL - 10.5 + t
2 TCL - 10.5 +
2 TCL - 9.5
2TCL - 10 + 2t
Minimum
-8.5 + t
TCL - 10+ t
TCL - 15+ t
Minimum
+ t
1/2 TCL = 1 to 40MHz
2t
Variable CPU Clock
0
1/2 TCL = 1 to 32MHz
A
C
Variable CPU Clock
F
C
F
F
C
A
A
A
A
2 TCL - 8.5 + t
2 TCL - 21 + t
3 TCL - 21 + t
TCL - 8.5 + t
Maximum
Maximum
F
C
C
F
161/184
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A

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