MCHC908JW32FC Freescale Semiconductor, MCHC908JW32FC Datasheet - Page 37
![IC MCU 32K FLASH 8MHZ 48-QFN](/photos/12/17/121792/mchc908jw32fc_sml.jpg)
MCHC908JW32FC
Manufacturer Part Number
MCHC908JW32FC
Description
IC MCU 32K FLASH 8MHZ 48-QFN
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.RD3152MMA7260Q.pdf
(232 pages)
Specifications of MCHC908JW32FC
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SPI, USB
Peripherals
LED, LVD, POR, PWM
Number Of I /o
29
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Package / Case
48-QFN
Controller Family/series
HC08
No. Of I/o's
29
Ram Memory Size
1KB
Cpu Speed
8MHz
No. Of Timers
1
Embedded Interface Type
SPI, USB
Rohs Compliant
Yes
Processor Series
HC08JW
Core
HC08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
SPI, USB
Number Of Programmable I/os
29
Number Of Timers
2
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
Minimum Operating Temperature
0 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Details
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- Download datasheet (3Mb)
2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX800 or $XXC00. Use the following procedure to program a
row of FLASH memory.
Freescale Semiconductor
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
7. Wait for a time, t
8. Clear the HVEN bit
9. After time, t
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Write any data to any FLASH location within the FLASH memory address range.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Write any data to any FLASH location within the address range of the row to be programmed.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH location to be programmed.
7. Wait for time, t
8. Repeat steps 6 and 7 until all bytes within the row are programmed.
9. Clear the PGM bit.
address and data for programming.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
rcv
rcv
rcv
(1 µs), the memory can be accessed in read mode again.
(1 µs), the memory can be accessed in read mode again.
prog
nvh
(1 µs), the memory can be accessed in read mode again.
me
nvh
nvs
nvh1
nvs
pgs
(Figure 2-4
(5 µs).
(200 ms).
(20 µs to 40 µs).
(5 µs).
(5 µs).
(5 µs).
(10 µs).
(100 µs).
shows a flowchart of the programming algorithm.)
MC68HC908JW32 Data Sheet, Rev. 6
NOTE
NOTE
FLASH Memory
37
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