PIC18LF2523-I/SP Microchip Technology, PIC18LF2523-I/SP Datasheet - Page 341

• Manufacturer Part Number: PIC18LF2523-I/SP
• Description: IC PIC MCU FLASH 16KX16 28-DIP
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18LF2523-I/SP

• Core Size: 8-Bit
• Program Memory Size: 32KB (16K x 16)
• Core Processor: PIC
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 25
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-DIP (0.300", 7.62mm)
• Controller Family/series: PIC18
• No. Of I/o's: 25
• Eeprom Memory Size: 256Byte
• Ram Memory Size: 1.5KB
• Cpu Speed: 40MHz
• No. Of Timers: 4
• Package: 28SPDIP
• Device Core: PIC
• Family Name: PIC18
• Maximum Speed: 40 MHz
• Operating Supply Voltage: 2.5|3.3|5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 25
• Interface Type: I2C/SPI/USART
• On-chip Adc: 10-chx12-bit
• Number Of Timers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TABLE 26-1:
© 2007 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
DDP
Sym
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
DEW
P
PR
IE
IW
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if Single-Supply Programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
PP
/RE3 pin
(2)
PIC18F2423/2523/4423/4523
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
DD
100K
V
V
V
Min
10K
1M
3.0
2.0
40
40
—
—
—
—
+ 4.0V
MIN
MIN
MIN
1
Typ†
100K
10M
100
1M
—
—
—
—
—
—
—
—
—
4
4
2
Max
12.5
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
ms
ms
ms
ms
A
V
V
V
V
V
V
≤ +85°C for industrial
(Note 3)
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port
Using ICSP port
V
voltage
V
specifications are violated
V
MIN
MIN
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39755B-page 339