C8051F341-GQ Silicon Laboratories Inc, C8051F341-GQ Datasheet - Page 107
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C8051F341-GQ
Manufacturer Part Number
C8051F341-GQ
Description
IC 8051 MCU FLASH 32K 48TQFP
Manufacturer
Silicon Laboratories Inc
Series
C8051F34xr
Datasheets
1.C8051F349-GQ.pdf
(276 pages)
2.C8051F341-GQ.pdf
(1 pages)
3.C8051F347-GQ.pdf
(296 pages)
Specifications of C8051F341-GQ
Program Memory Type
FLASH
Program Memory Size
32KB (32K x 8)
Package / Case
48-TQFP, 48-VQFP
Core Processor
8051
Core Size
8-Bit
Speed
48MHz
Connectivity
EBI/EMI, SMBus (2-Wire/I²C), SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
40
Ram Size
2.25K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 20x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
3.25 KB
Interface Type
I2C/SMBus/SPI/UART/USB
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
40
Number Of Timers
4
Operating Supply Voltage
2.7 V to 5.25 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
KSK-SL-F34X, KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F340DK
Minimum Operating Temperature
- 40 C
On-chip Adc
17-ch x 10-bit
No. Of I/o's
40
Ram Memory Size
2304Byte
Cpu Speed
48MHz
No. Of Timers
4
Rohs Compliant
Yes
Package
48TQFP
Device Core
8051
Family Name
C8051F34x
Maximum Speed
48 MHz
Data Rom Size
128 B
A/d Bit Size
10 bit
A/d Channels Available
17
Height
1 mm
Length
7 mm
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Width
7 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1748 - ADAPTER TOOLSTICK FOR C8051F34X770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1452 - ADAPTER PROGRAM TOOLSTICK F340
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1299
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F341-GQ
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Company:
Part Number:
C8051F341-GQR
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
12. Flash Memory
On-chip, re-programmable Flash memory is included for program code and non-volatile data storage. The
Flash memory can be programmed in-system through the C2 interface or by software using the MOVX
instruction. Once cleared to logic 0, a Flash bit must be erased to set it back to logic 1. Flash bytes would
typically be erased (set to 0xFF) before being reprogrammed. The write and erase operations are automat-
ically timed by hardware for proper execution; data polling to determine the end of the write/erase opera-
tion is not required. Code execution is stalled during a Flash write/erase operation. Refer to Table 12.1 for
complete Flash memory electrical characteristics.
12.1. Programming The Flash Memory
The simplest means of programming the Flash memory is through the C2 interface using programming
tools provided by Silicon Labs or a third party vendor. This is the only means for programming a non-initial-
ized device. For details on the C2 commands to program Flash memory, see
on page
To ensure the integrity of Flash contents, it is strongly recommended that the V
enabled in any system which writes or erases Flash memory from code. It is also crucial to ensure
that the FLRT bit in register FLSCL be set to '1' if a clock speed higher than 25 MHz is being used
for the device.
12.1.1. Flash Lock and Key Functions
Flash writes and erases by user software are protected with a lock and key function. The Flash Lock and
Key Register (FLKEY) must be written with the correct key codes, in sequence, before Flash operations
may be performed. The key codes are: 0xA5, 0xF1. The timing does not matter, but the codes must be
written in order. If the key codes are written out of order, or the wrong codes are written, Flash writes and
erases will be disabled until the next system reset. Flash writes and erases will also be disabled if a Flash
write or erase is attempted before the key codes have been written properly. The Flash lock resets after
each write or erase; the key codes must be written again before a following Flash operation can be per-
formed. The FLKEY register is detailed in SFR Definition 12.2.
12.1.2. Flash Erase Procedure
The Flash memory can be programmed by software using the MOVX write instruction with the address and
data byte to be programmed provided as normal operands. Before writing to Flash memory using MOVX,
Flash write operations must be enabled by: (1) Writing the Flash key codes in sequence to the Flash Lock
register (FLKEY); and (2) Setting the PSWE Program Store Write Enable bit (PSCTL.0) to logic 1 (this
directs the MOVX writes to target Flash memory). The PSWE bit remains set until cleared by software.
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed must be erased before a new value is written.
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire 512-byte page, perform the following steps:
Step 1. Disable interrupts (recommended).
Step 2. Write the first key code to FLKEY: 0xA5.
Step 3. Write the second key code to FLKEY: 0xF1.
Step 4. Set the PSEE bit (register PSCTL).
Step 5. Set the PSWE bit (register PSCTL).
Step 6. Using the MOVX instruction, write a data byte to any location within the 512-byte page to
Step 7. Clear the PSWE bit (register PSCTL).
Step 8. Clear the PSEE bit (register PSCTI).
271.
be erased.
C8051F340/1/2/3/4/5/6/7/8/9/A/B/C/D
Rev. 1.3
Section “23. C2 Interface”
DD
monitor be left
107