ATTINY48-MMH Atmel, ATTINY48-MMH Datasheet - Page 21
![MCU AVR 4KB FLASH 12MHZ 28-VQFN](/photos/12/32/123209/28m1-vqfn_sml.jpg)
ATTINY48-MMH
Manufacturer Part Number
ATTINY48-MMH
Description
MCU AVR 4KB FLASH 12MHZ 28-VQFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY48-MMH
Core Processor
AVR
Core Size
8-Bit
Speed
12MHz
Connectivity
I²C, SPI
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
24
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
For Use With
ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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5.3.2
5.3.3
5.3.4
8008G–AVR–04/11
Read
Erase
Write
The programming method is selected using the EEPROM Programming Mode bits (EEPM1 and
EEPM0) in EEPROM Control Register (EECR). See
times are given in the same table.
Since EEPROM programming takes some time the application must wait for one operation to
complete before starting the next. This can be done by either polling the EEPROM Program
Enable bit (EEPE) in EEPROM Control Register (EECR), or via the EEPROM Ready Interrupt.
The EEPROM interrupt is controlled by the EEPROM Ready Interrupt Enable (EERIE) bit in
EECR.
To read an EEPROM memory location follow the procedure below:
In order to prevent unintentional EEPROM writes, a specific procedure must be followed to
erase memory locations. To erase an EEPROM memory location follow the procedure below:
The EEPE bit remains set until the erase operation has completed. While the device is busy pro-
gramming, it is not possible to perform any other EEPROM operations.
In order to prevent unintentional EEPROM writes, a specific procedure must be followed to write
to memory locations.
Before writing data to EEPROM the target location must be erased. This can be done either in
the same operation or as part of a split operation. Writing to an unerased EEPROM location will
result in corrupted data.
• Poll the EEPROM Program Enable bit (EEPE) in EEPROM Control Register (EECR) to make
• Write target address to EEPROM Address Registers (EEARH/EEARL).
• Start the read operation by setting the EEPROM Read Enable bit (EERE) in the EEPROM
• Read data from the EEPROM Data Register (EEDR).
• Poll the EEPROM Program Enable bit (EEPE) in EEPROM Control Register (EECR) to make
• Set mode of programming to erase by writing EEPROM Programming Mode bits (EEPM0
• Write target address to EEPROM Address Registers (EEARH/EEARL).
• Enable erase by setting EEPROM Master Program Enable (EEMPE) in EEPROM Control
before writing to them. This can be done at times when the system allows time-critical
operations, typically at start-up and initialisation.
sure no other EEPROM operations are in process. If set, wait to clear.
Control Register (EECR). During the read operation, the CPU is halted for four clock cycles
before executing the next instruction.
sure no other EEPROM operations are in process. If set, wait to clear.
and EEPM1) in EEPROM Control Register (EECR).
Register (EECR). Within four clock cycles, start the erase operation by setting the EEPROM
Program Enable bit (EEPE) in the EEPROM Control Register (EECR). During the erase
operation, the CPU is halted for two clock cycles before executing the next instruction.
Table 5-4 on page
ATtiny48/88
26. Write and erase
21
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