AT32UC3A1512-AUR Atmel, AT32UC3A1512-AUR Datasheet - Page 418

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AT32UC3A1512-AUR

Manufacturer Part Number
AT32UC3A1512-AUR
Description
MCU 32BIT 512KB FLASH 100-TQFP
Manufacturer
Atmel
Series
AVR®32 UC3r
Datasheets

Specifications of AT32UC3A1512-AUR

Core Processor
AVR
Core Size
32-Bit
Speed
66MHz
Connectivity
Ethernet, I²C, SPI, SSC, UART/USART, USB OTG
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
69
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
For Use With
ATAVRONEKIT - KIT AVR/AVR32 DEBUGGER/PROGRMMR770-1008 - ISP 4PORT ATMEL AVR32 MCU SPIATSTK600-TQFP100 - STK600 SOCKET/ADAPTER 100-TQFPATEVK1100 - KIT DEV/EVAL FOR AVR32 AT32UC3A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT32UC3A1512-AUR
Manufacturer:
Atmel
Quantity:
10 000
Figure 28-6. Read Burst, 32-bit SDRAM Access
28.7.3
32058J–AVR32–04/11
SDRAMC_A[12:0]
Border Management
D[31:0]
SDWE
SDCS
(Input)
SDCK
RAS
CAS
For a single access or an incremented burst of unspecified length, the SDRAM Controller antici-
pates the next access. While the last value of the column is returned by the SDRAM Controller
on the bus, the SDRAM Controller anticipates the read to the next column and thus anticipates
the CAS latency. This reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
When the memory row boundary has been reached, an automatic page break is inserted. In this
case, the SDRAM controller generates a precharge command, activates the new row and initi-
ates a read or write command. To comply with SDRAM timing parameters, an additional clock
cycle is inserted between the precharge/active (t
mand. This is described in
Row n
t
RCD
= 3
col a
Figure 28-7
CAS = 2
col b
Dna
below.
col c
Dnb
col d
RP
) command and the active/read (t
Dnc
col e
Dnd
col f
Dne
Dnf
AT32UC3A
RCD
) com-
418

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