AT91SAM9XE256-CU Atmel, AT91SAM9XE256-CU Datasheet - Page 183
AT91SAM9XE256-CU
Manufacturer Part Number
AT91SAM9XE256-CU
Description
MCU ARM9 256K FLASH 217-BGA
Manufacturer
Atmel
Series
AT91SAMr
Specifications of AT91SAM9XE256-CU
Core Processor
ARM9
Core Size
16/32-Bit
Speed
180MHz
Connectivity
EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
217-LFBGA
Processor Series
AT91SAMx
Core
ARM926EJ-S
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
2-Wire, EBI, I2S, SPI, USART
Maximum Clock Frequency
180 MHz
Number Of Programmable I/os
96
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JTRACE-ARM-2M, KSK-AT91SAM9XE-PL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
AT91SAM-ICE, AT91-ISP, AT91SAM9XE-EK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Package
217LFBGA
Device Core
ARM926EJ-S
Family Name
91S
Maximum Speed
180 MHz
Operating Supply Voltage
1.8|2.5|3.3 V
For Use With
AT91SAM9XE-EK - KIT EVAL FOR AT91SAM9XEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT91SAM9XE256-CU
Manufacturer:
ATMEL
Quantity:
215
- Current page: 183 of 860
- Download datasheet (13Mb)
22.6.7.2
6254C–ATARM–22-Jan-10
NAND Flash Signals
Figure 22-6. NAND Flash Signal Multiplexing on EBI Pins
The address latch enable and command latch enable signals on the NAND Flash device are
driven by address bits A22 and A21 of the EBI address bus. The user should note that any bit on
the EBI address bus can also be used for this purpose. The command, address or data words
on the data bus of the NAND Flash device are distinguished by using their address within the
NCSx address space. The chip enable (CE) signal of the device and the ready/busy (R/B) sig-
nals are connected to PIO lines. The CE signal then remains asserted even when NCSx is not
selected, preventing the device from returning to standby mode.
SMC
NWR0_NWE
NRD_NOE
AT91SAM9XE128/256/512 Preliminary
NCSx
NAND Flash Logic
NANDOE
NANDWE
NANDOE
NANDWE
183
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