S9S08SG4E2MTG Freescale Semiconductor, S9S08SG4E2MTG Datasheet - Page 311
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S9S08SG4E2MTG
Manufacturer Part Number
S9S08SG4E2MTG
Description
MCU 4K FLASH 16-TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.S9S08SG4E2CSC.pdf
(316 pages)
Specifications of S9S08SG4E2MTG
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
16-TSSOP
Processor Series
S08SG
Core
HCS08
Data Bus Width
8 bit
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08SG32, DEMO9S08SG32AUTO, DEMO9S08SG8, DEMO9S08SG8AUTO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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A.13 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
Num
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
The frequency of this clock is controlled by a software setting.
1
2
3
5
6
7
8
9
4
—
—
—
—
—
—
—
—
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/f
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to +125°C
Characteristic
4
2
2
MC9S08SG8 MCU Series Data Sheet, Rev. 6
Table A-16. FLASH Characteristics
1
FCLK
3
)
2
2
V
Symbol
prog/erase
V
n
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
FLPE
Read
10,000
150
Min
2.7
2.7
15
—
5
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
—
9
4
6.67
Max
200
5.5
5.5
—
—
—
DD
cycles
years
supply.
t
t
t
t
Unit
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
311
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