R5F211B1SP#U0 Renesas Electronics America, R5F211B1SP#U0 Datasheet - Page 28

• Manufacturer Part Number: R5F211B1SP#U0
• Description: IC R8C MCU FLASH 4K 20SSOP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/R8C/Tiny/1Br

Specifications of R5F211B1SP#U0

• Core Processor: R8C
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SIO, SSU, UART/USART
• Peripherals: LED, POR, Voltage Detect, WDT
• Number Of I /o: 13
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-SSOP
• For Use With: R0K5211B4S001BE - KIT STARTER FOR R8C/18191A1BR0K5211B4S000BE - KIT DEV EVALUATION R8C/1BR0E521174CPE10 - EMULATOR COMPACT R8C/18/19/1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/1A Group, R8C/1B Group
Rev.1.40
REJ03B0144-0140
Table 5.4
NOTES:
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. If emergency processing is required, a suspend request can be generated independent of this characteristic. In that case the
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
7. Customers desiring programming/erasure failure rate information should contact their Renesas technical support
8. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one. However, the same address must not be programmed more than once per erase operation (overwriting
prohibited).
normal time delay to suspend can be applied to the request. However, we recommend that a suspend request with an
interval of less than 650 µs is only used once because, if the suspend state continues, erasure cannot operate and the
incidence of erasure error rises.
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the number of erase operations between block A and block B
can further reduce the effective number of rewrites. It is also advisable to retain data on the erase count of each block and
limit the number of erase operations to a certain number.
command at least three times until the erase error does not occur.
representative.
CC
Dec 08, 2006
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Flash Memory (Program ROM) Electrical Characteristics
opr
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(8)
Parameter
= 0 to 60 °C, unless otherwise specified.
(2)
Ambient temperature = 55 °C
R8C/1A Group
R8C/1B Group
Conditions
1,000
100
Min.
650
2.7
2.7
20
−
−
−
0
−
0
(3)
(3)
5. Electrical Characteristics
Standard
Typ.
0.4
50
−
−
−
−
−
−
−
−
−
−
97+CPU clock
3+CPU clock
× 6 cycles
× 4 cycles
Max.
400
5.5
5.5
60
−
−
9
−
−
−
times
times
year
Unit
µs
µs
µs
ns
µs
°C
V
V
s