MC908MR8MPE Freescale Semiconductor, MC908MR8MPE Datasheet - Page 59

• Manufacturer Part Number: MC908MR8MPE
• Description: IC MCU 8BIT 8K FLASH 28-PDIP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908MR8MPE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 12
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 28-DIP (0.600", 15.24mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

4.2.4 FLASH Mass Erase Operation
4.2.5 FLASH Program/Read Operation
MC68HC908MR8 — Rev 4.1
Freescale Semiconductor
NOTE:
Use this step-by-step procedure to erase the entire FLASH memory to
read as logic 1:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
Programming of the FLASH memory is done on a row basis. A row
consists of 32 consecutive bytes starting from address $XX00, $XX20,
$XX40, and $XX80.
Use this step-by-step procedure to program a row of FLASH memory:
10. After a time, t
1. Set the ERASE bit and the MASS bit in the FLASH control register.
2. Read the block protect register.
3. Write to any FLASH address with any data within the page
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set the PGM bit in the FLASH control register. This configures the
2. Read the block protect register.
3. Write to any FLASH address with any data within the page
address range desired.
read mode again.
memory for program operation and enables the latching of
address and data programming.
Characteristics.
FLASH Memory
RCV
NVS
Erase
NVHL
(typically 1 µs), the memory can be accessed in
(minimum of 10 µs).
(minimum of 4 ms).
(minimum of 100 µs).
NVH
maximum. See
FLASH Memory
Technical Data
Introduction
21.7
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