HD64F3672FY Renesas Electronics America, HD64F3672FY Datasheet - Page 267
![IC H8 MCU FLASH 16K 48QFP](/photos/28/61/286105/48-lqfp__plqp0048kc-a_sml.jpg)
HD64F3672FY
Manufacturer Part Number
HD64F3672FY
Description
IC H8 MCU FLASH 16K 48QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet
1.HD64F3672FXV.pdf
(334 pages)
Specifications of HD64F3672FY
Core Processor
H8/300H
Core Size
16-Bit
Speed
16MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
26
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
48-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F3672FY
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F3672FYV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Notes: 1. Make the time settings in accordance with the program/erase algorithms.
Item
Erase
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
3. The time required to erase one block. (Indicates the time for which the E bit in flash
4. Programming time maximum value (t
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
6. Erase time maximum value (t
7. Set the maximum maximum erase count (N) according to the actual set value of (z), so
Programming count (n)
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
maximum programming count (N)
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
count (N)
that it does not exceed the erase time maximum value (t
Wait time after SWE
bit setting*
Wait time after ESU
bit setting*
Wait time after E bit
setting*
Wait time after E bit clear*
Wait time after ESU
bit clear*
Wait time after EV
bit setting*
Wait time after
dummy write*
Wait time after EV bit clear*
Wait time after SWE
bit clear*
Maximum erase count*
1
7
n
n
1
*
1
1
6
6
1000
1
1
1
1
z1 = 30 µs
z2 = 200 µs
1
*
6
*
1
7
1
E
(max)) = wait time after E bit setting (z)
Symbol Condition
x
y
z
N
P
(MAX)) = wait time after P bit setting (z)
Test
Rev.4.00 Nov. 02, 2005 Page 241 of 304
Min
1
100
10
10
10
20
2
4
100
—
Section 17 Electrical Characteristics
E
(max)).
Typ
—
—
—
—
—
—
—
—
—
—
Values
Max
—
—
100
—
—
—
—
—
—
120
REJ09B0143-0400
maximum erase
P
(MAX)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
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