UPD78F9200MA-CAC-A Renesas Electronics America, UPD78F9200MA-CAC-A Datasheet - Page 236

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UPD78F9200MA-CAC-A

Manufacturer Part Number
UPD78F9200MA-CAC-A
Description
MCU 8BIT 1KB FLASH 128B RAM
Manufacturer
Renesas Electronics America
Series
78K0S/Kx1+r
Datasheet

Specifications of UPD78F9200MA-CAC-A

Package / Case
*
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Speed
10MHz
Number Of I /o
7
Core Processor
78K0S
Program Memory Type
FLASH
Ram Size
128 x 8
Program Memory Size
1KB (1K x 8)
Data Converters
A/D 4x10b
Oscillator Type
Internal
Peripherals
LVD, POR, PWM, WDT
Core Size
8-Bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD78F9200MA-CAC-A
Manufacturer:
NEC
Quantity:
20 000
16.8 Flash Memory Programming by Self Programming
program, making it possible to upgrade programs in the field.
16.8.1 Outline of self programming
self programming mode. Write/erase processing for the flash memory, which has been set to the register in advance,
is performed by executing the HALT instruction during self programming mode. The HALT state is automatically
released when processing is completed.
Example of shifting normal mode to self programming mode for details.
diagram, Table 16-10 lists the commands for controlling self programming.
234
Table 16-8 shows the relationship between the security setting and the operation in each programming mode.
The 78K0S/KU1+ support a self programming function that can be used to rewrite the flash memory via a user
Caution
To execute self programming, shift the mode from the normal operation of the user program (normal mode) to the
To shift to the self programming mode, execute a specific sequence for a specific register. Refer to 16.8.4
Remark
Figure 16-8 shows a block diagram for self programming, Figure 16-9 shows the self programming state transition
Remarks 1.
Notes 1. Execution of each command is prohibited by the security setting.
Security Setting
Batch erase (chip erase)
Block erase
Write
Table 16-8. Relationship Between Security Setting and Operation In Each Programming Mode
Note Maskable interrupt servicing is disabled during self programming mode.
Normal mode
Self programming mode
2. Execution of self programming command is possible regardless of the security setting.
Data written by self programming can be referenced with the MOV instruction.
2.
Self programming processing must be included in the program before performing self
programming.
For usages of self programming, refer to use example mentioned in after 16.8.4.
To use the internal flash memory of the 78K0S/KU1+ as the external EEPROM for storing data,
refer to 78K0S/Kx1+ EEPROM Emulation Application Note (U17379E).
Programming Mode
Mode
Possible
Security Setting
Table 16-9. Self Programming Mode
On-Board/Off-Board Programming
CHAPTER 16 FLASH MEMORY
User’s Manual U18172EJ3V0UD
User Program Execution
Enabled
Enabled
Valid
Security Operation
Note
Note 1
Execution of Write/erase for Flash
Impossible
Memory with HALT Instruction
Security Setting
Self Programming
Enabled
Invalid
Security Operation
Note 2

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