STR912FW44X6 STMicroelectronics, STR912FW44X6 Datasheet - Page 61
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STR912FW44X6
Manufacturer Part Number
STR912FW44X6
Description
MCU 512K FLASH 96K SRAM USB CAN
Manufacturer
STMicroelectronics
Series
STR9r
Datasheet
1.STR910FM32X6.pdf
(73 pages)
Specifications of STR912FW44X6
Core Processor
ARM9
Core Size
32-Bit
Speed
96MHz
Connectivity
CAN, EBI/EMI, Ethernet, I²C, IrDA, Microwire, SPI, SSI, SSP, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, WDT
Number Of I /o
80
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
96K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 2 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-LQFP
For Use With
497-8267 - BOARD EVAL BASED ON STR9MCBSTR9UME - BOARD EVAL MCBSTR9 + ULINK-MEMCBSTR9U - BOARD EVAL MCBSTR9 + ULINK2497-5859 - EVAL BRD FULL USB DONGLE STR912MCBSTR9 - BOARD EVAL STM STR9 SERIES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
497-5063-2
497-5063-2
497-5063-2ND
STR912FW44X6T
497-5063-2
497-5063-2ND
STR912FW44X6T
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STR912FW44X6
Manufacturer:
ST
Quantity:
20 000
STR91xF
Figure 15. ADC conversion characteristics
1023
1022
1021
7
6
5
4
3
2
1
0
V
SSA
Digital Result
1
E
1LSB
O
2
IDEAL
3
=
V
---------------------------------------- -
DDA
4
1024
–
V
5
SSA
1 LSB
E
6
T
IDEAL
E
7
L
(2)
E
D
1021 1022 1023 1024
(3)
(1)
E
G
V
DDA
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
deviation between the actual and the ide-
al transfer curves.
E
first actual transition and the first ideal
one.
E
last ideal transition and the last actual
one.
E
deviation between actual steps and the
ideal one.
E
deviation between any actual transition
and the end point correlation line.
T
O
G
D
L
=Total Unadjusted Error: maximum
=Integral Linearity Error: maximum
=Differential Linearity Error: maximum
=Offset Error: deviation between the
=Gain Error: deviation between the
V
in
(LSB
IDEAL
)
Electrical characteristics
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