DSP56F803BU80 Freescale Semiconductor, DSP56F803BU80 Datasheet - Page 20
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DSP56F803BU80
Manufacturer Part Number
DSP56F803BU80
Description
IC DSP 80MHZ 31.5K FLASH 100LQFP
Manufacturer
Freescale Semiconductor
Series
56F8xxr
Datasheet
1.DSP56F803BU80E.pdf
(52 pages)
Specifications of DSP56F803BU80
Core Processor
56800
Core Size
16-Bit
Speed
80MHz
Connectivity
CAN, EBI/EMI, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
16
Program Memory Size
71KB (35.5K x 16)
Program Memory Type
FLASH
Ram Size
2.5K x 16
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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3.2 DC Electrical Characteristic
20
4.
5.
6.
7.
Input high voltage (XTAL/EXTAL)
Input low voltage (XTAL/EXTAL)
Input high voltage (Schmitt trigger inputs)
Input low voltage (Schmitt trigger inputs)
Input high voltage (all other digital inputs)
Input low voltage (all other digital inputs)
Input current high (pullup/pulldown resistors
disabled, V
Input current low (pullup/pulldown resistors
disabled, V
Input current high (with pullup resistor, V
Input current low (with pullup resistor, V
Input current high (with pulldown resistor, V
Input current low (with pulldown resistor, V
Nominal pullup or pulldown resistor value
Output tri-state current low
Output tri-state current high
Operating Conditions:
Thermal Characterization Parameter, Psi-JT (Ψ
thermocouple on top center of case as defined in JESD51-2. Ψ
temperature in steady state customer environments.
Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
See Section 5.1 from more details on thermal design considerations.
TJ = Junction Temperature
TA = Ambient Temperature
IN
IN
=V
=V
DD
SS
Characteristic
)
)
V
Table 3-4 DC Electrical Characteristics
SS
= V
SSA
IN
= 0 V, V
1
56F803 Technical Data, Rev. 16
IN
1
=V
=V
IN
IN
SS
=V
DD
=V
)
SS
DD
)
DD
)
JT
)
= V
), is the “resistance” from junction to reference point
DDA
R
Symbol
= 3.0–3.6 V, T
PU
I
I
V
I
I
V
V
I
V
I
IHPU
IHPD
ILPU
ILPD
V
OZH
V
OZL
I
I
IHC
ILC
IHS
ILS
IH
, R
IL
IH
IL
PD
JT
is a useful value to use to estimate junction
A
= –40° to +85°C, C
-210
2.25
Min
-0.3
-0.3
-10
-10
2.2
2.0
20
-1
-1
-1
-1
0
Typ
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
L
≤
Freescale Semiconductor
50pF, f
Max
2.75
180
0.5
5.5
0.8
5.5
0.8
-50
10
10
1
1
1
1
op
= 80MHz
Unit
KΩ
μA
μA
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V