MC68HC908GR8CFA Freescale Semiconductor, MC68HC908GR8CFA Datasheet - Page 385

• Manufacturer Part Number: MC68HC908GR8CFA
• Description: IC MCU FLSH 8BIT8MHZ 7.5K32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908GR8CFA

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 21
• Program Memory Size: 7.5KB (7.5K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

23.17 Memory Characteristics
MC68HC908GR8 — Rev 4.0
MOTOROLA
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
Notes:
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
7. FLASH endurance is a function of the temperature at which erasure occurs. Typical endurance degrades when the tem-
8. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
9. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
10. Motorola performs reliability testing for data retention. These tests are based on samples tested at elevated temperatures.
t
memory.
memory.
HVEN to logic 0.
t
least this many erase / program cycles.
perature while erasing is less than 25 C.
least this many erase / program cycles.
time specified.
Due to the higher activation energy of the elevated test temperature, calculated life tests correspond to more than 100
years of operation/storage at 55 C
rcv
Read
HV
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(9)
(6)
Freescale Semiconductor, Inc.
nvs
(8)
For More Information On This Product,
+ t
nvh
MErase
Erase
+ t
pgs
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
Go to: www.freescale.com
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
Electrical Specifications
+ (t
PROG
t
Symbol
MErase
t
f
Erase
Read
t
V
t
t
PROG
t
rcv
HV
t
t
t
nvhl
RDR
—
nvs
nvh
pgs
—
—
—
(4)
64)
(5)
(1)
(2)
(3)
t
HV
max.
Min
32k
100
10k
10k
1.3
10
30
10
—
1
1
4
5
5
1
100k
100k
100
Typ
—
—
—
—
—
—
—
—
—
—
—
—
(10)
(7)
(7)
Electrical Specifications
Memory Characteristics
8.4M
Max
—
—
—
—
—
—
—
—
40
—
—
—
—
4
Technical Data
Cycles
Cycles
Years
MHz
Unit
Hz
ms
ms
ms
V
s
s
s
s
s
s
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