DF38122HWV Renesas Electronics America, DF38122HWV Datasheet - Page 203

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DF38122HWV

Manufacturer Part Number
DF38122HWV
Description
IC H8/38122 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300L SLPr
Datasheet

Specifications of DF38122HWV

Core Processor
H8/300L
Core Size
8-Bit
Speed
10MHz
Connectivity
SCI
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
50
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
6.10.3
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
2. In memory read mode, command writes can be performed in the same way as in the command
3. After powering on, memory read mode is entered.
4. Tables 6.14 to 6.16 show the AC characteristics.
Table 6.14 AC Characteristics in Transition to Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read. Once memory
read mode has been entered, consecutive reads can be performed.
wait state.
Memory Read Mode
Figure 6.13 Timing Waveforms for Memory Read after Memory Write
CC
I/O7−I/O0
= 3.3 V ±0.3 V, V
Note: Data is latched on the rising edge of WE.
A15−A0
WE
OE
OE
CE
CE
Command write
t
ces
SS
t
f
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
= 0 V, T
t
t
wep
ds
t
ceh
t
r
a
t
dh
= 25°C ±5°C
20
0
0
50
50
70
Min
t
nxtc
Rev. 8.00 Mar. 09, 2010 Page 181 of 658
Max
30
30
Memory read mode
Address stable
Unit
µs
ns
ns
ns
ns
ns
ns
ns
Notes
Figure 6.13
REJ09B0042-0800
Section 6 ROM

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