ATA555812C-DDB Atmel, ATA555812C-DDB Datasheet - Page 36
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ATA555812C-DDB
Manufacturer Part Number
ATA555812C-DDB
Description
IC IDIC 1KBIT R/W DIE
Manufacturer
Atmel
Datasheet
1.ATA555812C-DDB.pdf
(52 pages)
Specifications of ATA555812C-DDB
Function
Read/Write
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
8. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
9. Electrical Characteristics
T
36
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
amb
Parameters
Maximum DC current into Coil 1/Coil 2
Maximum AC current into Coil 1/Coil 2 f = 125 kHz
Power dissipation (dice) (free-air condition, time of application: 1 s)
Electrostatic discharge maximum to MIL–Standard 883 C method 3015
Operating ambient temperature range
Storage temperature range (data retention reduced)
No. Parameters
2.1
2.2
2.3
3.1
3.2
6.1
6.2
1
4
5
= +25°C, f
RF frequency range
Supply current
(without current consumed
by the external LC tank
circuit)
Start-up time
Clamp voltage
Modulation parameters
Coil voltage (AC supply)
1. EEPROM device performance can be influenced by subsequent customer assembly processes especially if subjected to
2. Current into Coil 1/Coil 2 is limited to 10 mA. The damping characteristics are defined by the internally limited supply volt-
3. I
4. V
5. The tolerance of the on-chip resonance capacitor is ±12% at 3s over whole production. The capacitor tolerance is
ATA5558
high temperatures or mechanical stress conditions. So Atmel confirms these parameters only for devices as they leave the
Atmel production, as sawn wafers on foil or diced wafers in tray, etc.
age (= minimum AC coil voltage).
I
±3% at 3 on a wafer basis.
DD
DD
mod
coil
measurement setup R = 100 k ; V
= (V
= 125 kHz; unless otherwise specified
measurement setup: R = 1 k ; V
OUTmax
– V
CLK
)/R
Test Conditions
T
(see
Read – full temperature
range
Program EEPROM
Read, Select, Login
command
Write/program EEPROM
V
10 mA current into
Coil 1/Coil 2
V
generator and modulation
ON
amb
coil pp
coilpp
(4)
= 25°C
Figure 9-1 on page
= 6V on test circuit
= 6V
(2)
(3)
CLK
CLK
= 3 V; setup with modulation enabled (see
= 3V: EEPROM programmed to 00 ... 000 (erase all); NRZ, public mode.
37)
(2)
V
Symbol
V
clamp
V
I
t
clamp pp
mod pp
startup
mod pp
f
I
RF
DD
/T
amb
Symbol
V
I
T
P
T
I
coil p
amb
coil
max
stg
tot
Min.
100
14
6
6
Figure 9-1 on page
Typ.
–7.5
–40 to +150
125
2.5
4.2
–40 to +85
25
3
4
2
Value
2000
100
20
20
V
V
Max.
200
clamp
clamp
40
18
5
7
3
5
37).
mV/K
Unit
kHz
mA
ms
µA
µA
µA
4681E–RFID–11/09
V
V
V
V
Unit
mW
mA
mA
°C
°C
V
Type*
Q
Q
Q
Q
Q
Q
T
T
T
T