CPV362M4K Vishay, CPV362M4K Datasheet - Page 2

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

CPV362M4FPbF
Vishay High Power Products
www.vishay.com
2
Diode peak rate of fall of recovery during t
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Temperature coeff. of breakdown voltage
Collector to emitter saturation voltage
Gate threshold voltage
Gate to emitter leakage current
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
Diode forward voltage drop
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn on)
Gate to emitter charge (turn on)
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery current
Diode reverse recovery charge
For technical questions, contact: [e-mail]
b
ΔV
ΔV
dI
SYMBOL
SYMBOL
(BR)CES
V
V
GE(th)
V
(rec)M
(BR)CES
t
t
t
t
C
I
I
CE(on)
V
C
C
GE(th)
Q
Q
E
E
d(on)
d(off)
d(on)
d(off)
GES
g
CES
Q
E
E
Q
t
I
t
t
t
t
oes
FM
res
J
on
off
ies
rr
rr
fe
ge
gc
r
f
ts
r
f
ts
g
rr
= 25 °C unless otherwise specified)
J
/ΔT
/dt
/ΔT
= 25 °C unless otherwise specified)
IGBT SIP Module
J
J
(Fast IGBT)
V
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
V
I
I
I
V
V
V
V
Pulse width 5.0 µs; single shot
V
V
I
I
I
V
See fig. 8
T
I
V
Energy losses include “tail” and diode
reversev recovery.
See fig. 9, 10, 18
T
I
V
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
V
V
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
GE
GE
CE
GE
GE
CC
GE
GE
GE
CC
= 4.8 A
= 8.8 A
= 4.8 A, T
= 8.0 A
= 8.0 A, T
= 4.8 A
= 4.8 A, V
= 4.8 A, V
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 150 °C,
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= V
= 100 V, I
= 400 V
= 15 V, R
= 15 V, R
= 0 V
= 30 V
= 0 V, I
= 0 V, I
= ± 20 V
= 0 V, I
= 0 V, V
= 0 V, V
GE
, I
TEST CONDITIONS
TEST CONDITIONS
C
C
C
J
C
J
CC
CC
CE
CE
= 250 µA
= 1.0 mA
= 1.0 mA
= 150 °C
G
G
= 250 µA
C
= 150 °C
See fig. 14
See fig. 15
See fig. 16
See fig. 17
= 480 V
= 480 V
= 600 V
= 600 V, T
= 4.8 A
= 50 Ω
= 50 Ω
J
= 150 °C
See fig. 7
I
V
dI/dt = 200 A/µs
F
R
= 8.0 A
V
See fig. 2, 5
See fig. 13
= 200 V
GE
= 15 V
MIN.
MIN.
600
3.0
2.9
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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Document Number: 94361
TYP.
TYP.
0.72
1.41
1.66
1.42
0.23
0.33
0.45
0.93
200
214
435
364
340
124
240
210
-11
5.0
1.4
1.3
4.0
5.9
3.5
4.5
30
13
49
22
48
25
63
37
55
65
-
-
-
-
-
Revision: 01-Sep-08
MAX.
MAX. UNITS
± 100
1700
0.70
250
300
320
138
360
1.7
6.0
1.7
1.6
6.0
8.0
45
20
55
90
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
mV/°C
V/°C
A/µs
mJ
mJ
µA
nC
nC
nA
ns
ns
pF
ns
V
V
S
V
A