CPV362M4K Vishay, CPV362M4K Datasheet - Page 6

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

CPV362M4FPbF
Vishay High Power Products
Fig. 18a - Test Circuit for Measurement of I
www.vishay.com
6
Fig. 18b - Test Waveforms of Circuit of Fig. 18a,
+ V
80 %
of V
GE
I
CE
C
t
d
100
(off)
10 %
V
CE
V
T
T
J
J
R
Fig. 17 - Typical dI
= 125 °C
= 25 °C
= 200 V
Defining E
t1
I
I
rr
F
, t
430 µF
= 16 A
V
d(on)
CE
I
F
90 % V
dI
I
F
, t
I
F
= 8.0 A
C
= 4.0 A
off
r
/dt - (A/µs)
, t
tf
, t
d(off)
GE
d(off)
t2
(REC)M
90 % I
, t
, t
For technical questions, contact: [e-mail]
f
Same type
device
as
D.U.T.
LM
D.U.T.
f
Eoff =
, E
/dt vs dI
C
5 % I
on
, E
C
t1 + 5 µs
V
t1
CE
off(diode)
F
I
/dt
C
dt
1000
IGBT SIP Module
, t
rr
, Q
(Fast IGBT)
rr
,
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
Fig. 18c - Test Waveforms of Circuit of Fig. 18a,
Fig. 18d - Test Waveforms of Circuit of Fig. 18a,
V
V
CC
t0
Diode reverse
recovery energy
10 % + V
pk
I
t
C
d
10 %
I
(on)
C
10 % V
tx
G
t1
Defining E
I
CC
Defining E
rr
Vce
t1
tr
t3
t2
5 % V
t
rr
90 % I
rec
on
CE
, t
Gate voltage D.U.T.
, t
+ V
rr
C
d(on)
, Q
V
G
Diode recovery
waveforms
t4
G
E
Document Number: 94361
rr
, t
rec
, I
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
10 % I
t2
Eon =
r
=
rr
D.U.T. voltage
and current
I
Q
pk
rr
=
Revision: 01-Sep-08
rr
t4
V
t3
d
t2
V
t1
I
I
t
I
tx
C
C
CE
rr
C
V
dt
dt
CC
I
C
dt