CPV362M4K Vishay, CPV362M4K Datasheet - Page 3

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

Document Number: 94361
Revision: 01-Sep-08
1
5
0
9
8
7
6
5
4
3
2
1
0.1
Fig. 2 - Typical Output Characteristics
T
V
Fig. 3 - Typical Transfer Characteristics
J
CE
6
= 150 °C
V
GE
- Collector to Emitter Voltage (V)
7
- Gate to Emitter Voltage (V)
T
J
= 25 °C
8
T
J
= 25 °C
9
T
10
J
V
20 µs pulse width
= 150 °C
For technical questions, contact: [e-mail]
V
5 µs pulse width
GE
CC
11
= 15 V
= 50 V
Fig. 1 - Typical Load Current vs. Frequency
12
(Load Current = I
1
13
IGBT SIP Module
14
10
(Fast IGBT)
f - Frequency (kHz)
RMS
of Fundamental)
10
- 60 - 40 - 20 0
25
T
T
Power factor = 0.8
Modulation depth = 1.15
V
Fig. 5 - Typical Collector to Emitter Voltage vs.
C
J
CC
Vishay High Power Products
V
80 µs pulse width
= 90 °C
GE
= 125 °C
Fig. 4 - Maximum Collector Current vs.
= 50 % of rated voltage
= 15 V
T
J
T
50
- Junction Temperature (°C)
C
- Case Temperature (°C)
Junction Temperature
Case Temperature
20 40 60 80 100 120 140 160
CPV362M4FPbF
75
100
100
I
I
I
C
C
C
= 9.6 A
= 4.8 A
= 2.4 A
2.63
2.34
2.05
1.75
1.46
1.17
0.88
0.58
0.29
0.00
125
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150
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