CPV362M4K Vishay, CPV362M4K Datasheet - Page 5

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

Document Number: 94361
Revision: 01-Sep-08
0.4
1
Fig. 13 - Maximum Forward Voltage Drop vs.
0
V
T
R
T
V
V
GE
J
V
J
CC
GE
G
Fig. 11 - Typical Switching Losses vs.
= 125 °C
= 150 °C
CE
= 50 Ω
I
0.8
= 20 V
= 480 V
= 15 V
C
Instantaneous Forward Current
- Collector to Emitter Voltage (V)
V
- Collector to Emitter Current (A)
Collector to Emitter Current
FM
2
Fig. 12 - Turn-Off SOA
1.2
- Forward Voltage Drop
10
Safe operating area
1.6
4
T
T
T
J
J
J
= 150 °C
= 125 °C
= 25 °C
2.0
For technical questions, contact: [e-mail]
6
100
2.4
8
2.8
IGBT SIP Module
1000
3.2
10
(Fast IGBT)
Fig. 14 - Typical Reverse Recovery Time vs. dI
100
100
100
Fig. 15 - Typical Recovery Current vs. dI
Vishay High Power Products
Fig. 16 - Typical Stored Charge vs. dI
V
T
T
I
I
V
T
T
F
F
R
J
J
J
J
R
= 8.0 A
= 8.0 A
= 125 °C
= 25 °C
= 200 V
= 125 °C
= 25 °C
= 200 V
I
F
= 16 A
dI
dI
dI
I
F
CPV362M4FPbF
F
F
F
= 16 A
/dt - (A/µs)
/dt - (A/µs)
/dt (A/µs)
I
F
I
= 16 A
F
= 4.0 A
www.vishay.com
I
F
= 4.0 A
F
/dt
F
1000
1000
1000
/dt
F
/dt
5