GB35XF120K Vishay, GB35XF120K Datasheet - Page 3

• Manufacturer Part Number: GB35XF120K
• Description: MODULE IGBT 1200V 35A ECONO2 6PK
• Manufacturer: Vishay

Specifications of GB35XF120K

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 3.475nF @ 30V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ECONO2
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 93651
Revision: 01-Sep-08
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case IGBT
Junction to case DIODE
Case to sink, flat, greased surface MODULE
Mounting torque (M5)
Weight
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
Fig. 1 - Typical IGBT Output Characteristics
Fig. 2 - Typical IGBT Output Characteristics
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1
1
T
T
J
J
= 125 °C, t
= 25 °C; t
2
2
V CE (V)
V CE (V)
3
3
p
p
= 80 µs
= 80 µs
For technical questions, contact: [e-mail]
4
4
IGBT Sixpack Module, 35 A
5
5
SYMBOL
R
R
thCS
thJC
6
6
MIN.
2.7
-
-
-
-
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
TYP.
5
0.05
5
170
Vishay High Power Products
-
-
-
Fig. 4 - Typical V
Fig. 3 - Typical V
10
10
T
T
J
V GE (V)
J
V GE (V)
= 125 °C
= 25 °C
MAX.
0.44
0.80
3.3
-
-
GB35XF120K
CE
CE
I CE = 17.5A
I CE = 35A
I CE = 70A
I CE = 17.5A
I CE = 35A
I CE = 70A
15
15
vs. V
vs. V
GE
GE
www.vishay.com
UNITS
20
°C/W
20
Nm
g
3