GB35XF120K Vishay, GB35XF120K Datasheet - Page 6

• Manufacturer Part Number: GB35XF120K
• Description: MODULE IGBT 1200V 35A ECONO2 6PK
• Manufacturer: Vishay

Specifications of GB35XF120K

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 3.475nF @ 30V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ECONO2
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

GB35XF120K
Vishay High Power Products
www.vishay.com
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100
90
80
70
60
50
40
30
20
10
0
0
Fig. 17 - Typical Diode I
20
T
J
= 125 °C
I F (A)
40
R G = 4.7 Ω
R G = 10 Ω
R G = 47 Ω
For technical questions, contact: [e-mail]
R G = 22 Ω
RR
60
vs. I
Fig. 19 - Typical Diode I
IGBT Sixpack Module, 35 A
90
80
70
60
50
40
30
20
10
F
0
0
80
V
GE
500
= 15 V; I
1000
di F /dt (A/µs)
CE
= 35 A; T
RR
1500
vs. dI
F
J
/dt; V
= 125 °C
2000
90
80
70
60
50
40
30
20
10
CC
0
= 600 V;
0
2500
Fig. 18 - Typical Diode I
10
T
J
= 125 °C; I
20
R G ( Ω)
F
30
Document Number: 93651
= 35 A
RR
Revision: 01-Sep-08
vs. R
40
G
50