GB35XF120K Vishay, GB35XF120K Datasheet - Page 5

• Manufacturer Part Number: GB35XF120K
• Description: MODULE IGBT 1200V 35A ECONO2 6PK
• Manufacturer: Vishay

Specifications of GB35XF120K

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 3.475nF @ 30V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ECONO2
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 93651
Revision: 01-Sep-08
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1000
100
0.1
60
40
20
300
250
200
150
100
10
50
0
1
0
Fig. 11 - Maximum DC Collector Current vs.
0
1
0
Fig. 12 - Power Dissipation vs. Case
20
20
T
10
40
Fig. 13 - Forward SOA
40
C
Case Temperature
= 25 °C; T
60
Temperature
60
V CE (V)
T C (°C)
T
100
C
80
80
(°C)
J
100 120 140 160
≤ 150 °C
100
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1000
120
100 µs
20 µs
1 ms
10 ms
DC
IGBT Sixpack Module, 35 A
140
10000
160
1000
400
350
300
250
200
150
100
100
50
10
70
60
50
40
30
20
10
1
0
0
Fig. 16 - Typical Diode Forward Characteristics
10
0.0
0
Fig. 15 - Typical Transfer Characteristics
Vishay High Power Products
Fig. 14 - Reverse Bias SOA
V
5
T
1.0
CE
J
100
= 150 °C; V
T J = 25°C
T J = 125°C
= 50 V; t
25°C
125°C
V GE (V)
V CE (V)
t
p
10
V F (V)
= 80 µs
2.0
p
GB35XF120K
= 10 µs
GE
1000
= 15 V
15
3.0
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20
10000
4.0
5