GB35XF120K Vishay, GB35XF120K Datasheet - Page 4

• Manufacturer Part Number: GB35XF120K
• Description: MODULE IGBT 1200V 35A ECONO2 6PK
• Manufacturer: Vishay

Specifications of GB35XF120K

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 3.475nF @ 30V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ECONO2
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

GB35XF120K
Vishay High Power Products
www.vishay.com
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8000
7000
6000
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1000
1000
7000
6000
5000
4000
3000
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1000
100
10
0
0
0
0
0
T
td OFF
T
T
Fig. 6 - Typical Switching Time vs. I
J
td ON
Fig. 5 - Typical Energy Loss vs. I
Fig. 7 - Typical Energy Loss vs. R
J
J
t R
= 125 °C; L = 400 µH; V
t F
= 125 °C; L = 400 µH; V
= 125 °C; L = 400 µH; V
10
R
20
20
R
I
CE
G
G
= 10 Ω; V
= 10 Ω; V
= 35 A; V
20
I C (A)
R G ( Ω )
I C (A)
40
40
GE
GE
GE
E ON
E ON
30
= 15 V
For technical questions, contact: [e-mail]
= 15 V
= 15 V
CE
60
CE
CE
60
E OFF
= 600 V
E OFF
= 600 V
40
= 600 V
IGBT Sixpack Module, 35 A
C
G
C
80
50
80
10000
10000
1000
1000
100
100
16
14
12
10
10
10
8
6
4
2
0
0
0
0
td OFF
td ON
t R
t F
Fig. 10 - Typical Gate Charge vs. V
Fig. 8 - Typical Switching Time vs. R
T
Fig. 9 - Typical Capacitance vs. V
J
= 125 °C; L = 400 µH; V
50
Q G , Total Gate Charge (nC)
20
10
I
I
CE
CE
V
100
GE
= 35 A; L = 600 µH
= 35 A; V
= 0 V; f = 1 MHz
40
20
V CE (V)
R G ( Ω )
150
400V
GE
60
30
Document Number: 93651
200
= 15 V
Cies
Cres
Coes
CE
Revision: 01-Sep-08
= 600 V
80
250
40
600V
CE
GE
G
300
100
50