GB35XF120K Vishay, GB35XF120K Datasheet - Page 9

• Manufacturer Part Number: GB35XF120K
• Description: MODULE IGBT 1200V 35A ECONO2 6PK
• Manufacturer: Vishay

Specifications of GB35XF120K

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 3.475nF @ 30V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ECONO2
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ORDERING INFORMATION TABLE
Document Number: 93651
Revision: 01-Sep-08
查询"GB35XF120K"供应商
-100
Fig. WF1 - Typical Turn-Off Loss Waveform
900
800
700
600
500
400
300
200
100
0
-1.00
at T
Device code
J
0.00
= 125 °C using Fig. CT.4
Time(µs)
Eoff Loss
1.00
5% V
tf
90% I
5% I
CE
CE
CE
2.00
1
2
3
4
5
6
7
For technical questions, contact: [e-mail]
G
1
IGBT Sixpack Module, 35 A
-
-
-
-
-
-
-
3.00
B
45
40
35
30
25
20
15
10
5
0
-5
2
Insulated Gate Bipolar Transistor (IGBT)
IGBT Generation 5 NPT
Current rating (35 = 35 A)
Circuit configuration
Package (F = ECONO2)
Voltage rating (120 = 1200 V)
Ultrafast (Speed 8 to 60 kHz)
(X = Sixpack or three phase inverter)
35
3
X
4
F
5
120
-100
Fig. WF2 - Typical Turn-On Loss Waveform
800
700
600
500
400
300
200
100
6
0
10.00
Vishay High Power Products
at T
tr
K
7
J
10.20
= 125 °C using Fig. CT.4
Eon Loss
Time (µs)
10.40
10% test current
TEST CURRENT
90% test current
GB35XF120K
10.60
5% V
CE
10.80
www.vishay.com
120
105
90
75
60
45
30
15
0
-15
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